MgB2 Hot-Electron Bolometer Mixers at Terahertz Frequencies
نویسندگان
چکیده
In this paper we compare the performance of MgB2 Hot-Electron Bolometer Mixers operating at Local Oscillator frequencies of 0.6 THz and 1.63 THz. The minimum noise temperatures that were obtained are 700 K and 1150 K for 0.6 THz and 1.63THz respectively. The receiver noise bandwidth is of the order of 2.2-3GHz for 10nm thick HEB devices with a Tc of 8.5K. Sub-micrometer size HEBs were also fabricated with no degradation of the initial film quality when a 20nm MgB2 film with a Tc of 22K was used. In the direct detection mode, the maximum voltage responsivity is in the range of 1-2kV/W at 1.63THz and the optimal bias current is around 1/4-1/3 of the Ic at 4.2K.
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